Optical Generation And Recombination Calculation

Apply when calculating carrier losses within the bulk volume of the perovskite material.

Procedure:

1. Identify carrier concentrations (n, p) and intrinsic carrier density (ni)
2. Obtain material recombination coefficients
3. Apply Equation 64 to calculate R_bulk
4. Result: Recombination rate in units of cm^-3 s^-1

Interfacial Recombination Rates

Apply when calculating recombination at device interfaces (perovskite/HTL or perovskite/ETL).

Procedure:

1. Determine perovskite carrier concentrations adjacent to each interface (n+, p+)
2. Obtain intrinsic carrier density (ni), surface recombination velocities, and electric field (E)
3. Apply Equations 65 and 66 to calculate interfacial recombination rates R_l(n+, p+)
4. These rates are equivalent to IonMonger formulations but coded in terms of perovskite carrier concentrations

Important: These rates apply specifically to interfaces and are expressed in terms of perovskite-side carrier concentrations (see Footnote 4 in source).3e:["$","$L48",null,{"content":"$49","frontMatter":{"name":"optical-generation-and-recombination-calculation","description":"Calculate optical generation rates, bulk recombination rates, and interfacial recombination rates for perovskite solar cell simulations. Use when modeling carrier dynamics and losses in drift-diffusion simulations of semiconductor devices, specifically PSCs."}}]