Cdscdte Band Inversion Analysis

3. Model Band Bending (Open Circuit Condition)

• Constraint: Fermi level must remain horizontal (constant)
• Both valence and conduction bands curve upward in the field-quenched region
• Verify band continuity across the interface

4. Evaluate Band Disconnection

• Compare forward bias state vs. quenched state:
  • Forward Bias: CdS conduction band connects to CdTe conduction band
  • Quenched State: CdS conduction band disconnects from CdTe conduction band
• Assess the effectiveness of electron back-diffusion limitation

5. Calculate Dipole Moment Change

• Determine the band offset from the dipole moment shift
• Reference experimental evidence: Schottky barrier dipole moments can change with photoconductivity

Output

• Modified band diagram showing band disconnection
• Analysis of leakage prevention effectiveness
• Dipole moment change quantification

Constraints

• Fermi level must remain horizontal throughout the analysis
• Field quenching strength must be sufficient for inversion38:["$","$L41",null,{"content":"$42","frontMatter":{"name":"CdS/CdTe Band Inversion Analysis","description":"Analyze and model p-type inversion at CdS/CdTe interfaces under strong field quenching conditions. Use this skill when working with CdS/CdTe solar cell band diagrams, investigating leakage current prevention through band disconnection, or modeling interface dipole moment changes under photoconductivity effects."}}]