Analyze carrier density profiles, current distributions, and recombination behavior in thin symmetrical pn-junction devices under forward or reverse bias. Use when modeling photodiodes with homogeneous optical generation, investigating current saturation phenomena, DRO-range effects, or diode quality factor behavior under bias conditions.
Apply this skill when analyzing thin symmetrical pn-junction devices that:
Verify these conditions before analysis:
: Space charge, field, and potential distributions are determined by majority carriers only, maintaining the same qualitative shape as without light. Currents at which the junction is pulled open increase by EIGHT orders of magnitude (from dark current ~10^-10 A/cm² to photogenerated current ~10^-2 A/cm²).
Execute this branch when analyzing devices under reverse bias:
The Domain of Reduced Output appears when approaching current saturation:
Execute this branch when analyzing devices under forward bias:
Generate the following results:
| Variable | Unit | Description |
|---|---|---|
| U | cm^-3 s^-1 | Net generation rate (U = go - r) |
| go | cm^-3 s^-1 | Optical generation rate |
| r(x) | cm^-3 s^-1 | Recombination rate as function of position |
| A | dimensionless | Diode quality factor |