Skill File

Germanium Semiconductor Parameters

Name: Germanium Semiconductor Parameters
Author: ShaneLogic

Access standardized material constants and device parameters for Germanium Schottky barriers and pn-junctions at 300K. Use when setting up numerical simulations, validating models, or performing calculations for Ge-based semiconductor devices.

ShaneLogic1 starsMar 20, 2026

Occupation
Categories: Computational Chemistry

Skill Content

Overview

This skill provides the complete set of physical constants, material parameters, and device specifications for Germanium semiconductor devices at T = 300 K. Use these parameters when setting up numerical simulations or performing analytical calculations.

When to Use

Setting up numerical simulation for Ge Schottky barrier
Setting up numerical simulation for Ge pn-junction
Validating device models with reference data
Performing analytical calculations requiring Ge constants
Comparing experimental data with theoretical models

Germanium Schottky Barrier Parameters (Table 29.1)

Doping and Densities

Nd  (Donor density)             = 10^16 cm⁻³
Nr  (Recombination center)      = 10^16 cm⁻³
Nc  (Effective DOS conduction)  = 10^19 cm⁻³
Nv  (Effective DOS valence)     = 6 × 10^18 cm⁻³
n10 (Electron density at x=0)    = 10^16 cm⁻³

Related Skills

Germanium Semiconductor Parameters | Skills Pool

Eg                (Band gap)                    = 0.66 eV
Ei - Er           (Intrinsic - Recombination)   = 0.10 eV
ψ_MS,n  (Metal-semiconductor, n-type)          = 0.319 V
ψ_MS,p  (Metal-semiconductor, p-type)          = 0.341 V
p10     (Hole density at x=d1)                 = 5.13 × 10^10 cm⁻³

ccv   (Capture coefficient)        = 10^-9 cm³/s
μn    (Electron mobility)          = 3900 cm²/Vs
μp    (Hole mobility)              = 1900 cm²/Vs
nc    (Electron density at interface) = 4.48 × 10^13 cm⁻³
pc    (Hole density at interface)     = 1.15 × 10^13 cm⁻³
vn*   (Thermal velocity)          = 5.7 × 10^6 cm/s

ε     (Dielectric constant)       = 16
T     (Temperature)               = 300 K
ni    (Intrinsic carrier density) = 2.265 × 10^13 cm⁻³

Na (Acceptor doping) = 10^17 cm⁻³
Nd (Donor doping)   = 10^16 cm⁻³

Nr1 (Recombination center 1) = 10^17 cm⁻³
Nr2 (Recombination center 2) = 10^16 cm⁻³

Nc (Conduction band) = 1.04 × 10^19 cm⁻³
Nv (Valence band)    = 5.76 × 10^18 cm⁻³

n10 (p-side electron)  = 5.138 × 10^9 cm⁻³
p10 (p-side hole)      = 10^17 cm⁻³
n20 (n-side electron)  = 10^16 cm⁻³
p20 (n-side hole)      = 5.138 × 10^10 cm⁻³

un0 (Electron mobility) = 3900 cm²/Vs
up0 (Hole mobility)     = 1900 cm²/Vs

Eg (Band gap)           = 0.66 eV
El - Er (Energy level)  = 0.1 eV
Ccr (Capture coefficient) = 10^-9 cm³/s
Ccv (Capture coefficient) = 10^-9 cm³/s
vn* (Thermal velocity)    = 5.7 × 10^6 cm/s
vp* (Thermal velocity)    = 5.7 × 10^6 cm/s

ε (Dielectric constant) = 16
T (Temperature)         = 300 K

ni = 2.265 × 10^13 cm⁻³ (for both Schottky and pn-junction)

ψD = (kT/e) * ln(Na * Nd / ni²)

kT/e at 300 K ≈ 0.0259 V

Germanium Semiconductor Parameters

Overview

When to Use

Germanium Schottky Barrier Parameters (Table 29.1)

Doping and Densities

Germanium Semiconductor Parameters

Overview

When to Use

Germanium Schottky Barrier Parameters (Table 29.1)

Doping and Densities

Energy and Potentials

Transport and Capture

Environment

Abrupt Germanium PN-Junction Parameters (Table 30.1)

Doping Concentrations

Recombination Centers

Effective Densities of States

Equilibrium Carrier Densities

Mobilities

Energy and Capture Constants

Material Constants

Common Derived Parameters

Intrinsic Carrier Density

Diffusion Potential (PN-Junction)

Thermal Voltage

Usage Guidelines

For Schottky Barrier Analysis

For PN-Junction Analysis

For Mixed Analysis

Output

Healthcare Cdss Patterns

Drug Discovery

Qmd

Attack Tree Construction

Azure Ai Anomalydetector Java

Viboscope