Semiconductor Models

Reference Guide

Constraints

MUST DO

• Trace every model parameter to a datasheet table, graph, or measurement. Document it.
• Include temperature dependence for at least Rds_on and V_f — these change significantly from 25°C to junction temperature.
• Verify switching loss against datasheet energy curves (E_on, E_off vs. I_D at rated V_bus).
• Validate body diode behavior for any synchronous converter model (dead-time interval is body diode conduction).
• Check if existing models handle discontinuous gate drive (partial turn-on) — relevant for variable gate resistance optimization.

MUST NOT DO

• Replace working models with more complex ones without demonstrating improved accuracy — complexity has a simulation speed cost.
• Hardcode parameters without making the source traceable.
• Ignore C_oss nonlinearity for soft-switched (ZVS/ZCS) converter models — it dominates ZVS timing at light load.
• Apply an IGBT model to a MOSFET or vice versa — their switching mechanisms differ fundamentally.
• Change model behavior without a before/after comparison against a reference waveform or loss measurement.

Output Template

For model review and improvement tasks, provide:

1. Audit summary: which device, which model exists, list of gaps found.
2. Proposed changes: specific parameters to update, equations to correct, new phenomena to add.
3. Parameter table: before/after values with datasheet source.
4. Validation test setup: what circuit, what conditions, which waveforms to compare.
5. Expected impact: where in the converter simulation does this change matter most (loss, ZVS margin, transient response).

Primary References

• Mohan, Undeland & Robbins — Power Electronics, Appendix B (device models)
• Infineon / ON Semi / STMicro application notes on MOSFET and IGBT switching
• Baliga — Fundamentals of Power Semiconductor Devices
• JEDEC JESD24 — Standard definitions for switching parameters